Comprehensive investigation on different ions of geostationary orbit induced single event burnout in GaN HEMT power devices
Wangran Wu, Wenting Xu, Kai Qu, Guangan Yang, Zuoxu Yu, Weifeng Sun
Topics & Concepts
High-electron-mobility transistorIonMaterials scienceGeostationary orbitIrradiationOptoelectronicsLinear energy transferVoltagePower (physics)Electrical engineeringPhysicsTransistorEngineeringNuclear physicsAstronomyQuantum mechanicsSatelliteRadiation Effects in ElectronicsRadiation Detection and Scintillator TechnologiesPhotocathodes and Microchannel Plates