Litcius/Paper detail

Design of a β-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode With p-Type III-Nitride Guard Ring for Enhanced Breakdown

Saurav Roy, Arkka Bhattacharyya, Sriram Krishnamoorthy

2020IEEE Transactions on Electron Devices32 citationsDOIOpen Access PDF

Abstract

This work presents the electrostatic analysis of a novel Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> vertical Schottky diode with three different guard ring (GR) configurations to reduce the peak electric field at the metal edges. Highly doped p-type GaN, p-type nonpolar AlGaN, and polarization-doped graded p-AlGaN are simulated and analyzed as the GR material, which forms a heterojunction with the Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> drift layer. GR with nonpolar graded p-AlGaN with a bandgap larger than Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> is found to show the best performance in terms of screening the electric field at the metal edges. The proposed GR configuration is also compared with a reported Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> Schottky diode with no GR and a structure with high-resistive nitrogen-doped GR. The optimized design is predicted to have a breakdown voltage as high as 6.2 kV and a specific ON-resistance of 3.55 mΩ-cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , which leads to an excellent power figure of merit of 10.8 GW/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> .

Topics & Concepts

Schottky diodeOptoelectronicsMaterials scienceBreakdown voltageSchottky barrierFigure of meritElectric fieldDiodeDopingWide-bandgap semiconductorMetal–semiconductor junctionHeterojunctionSchottky effectVoltageBand gapHigh voltageSemiconductorDepletion regionGallium arsenideGa2O3 and related materialsGaN-based semiconductor devices and materialsPhotocathodes and Microchannel Plates