Total Ionizing Dose in Nano-Scaled CMOS Technologies
F. Faccio, Giulio Borghello, Stefano Bonaldo
Abstract
Despite incredible technological advances in the fabrication of MOS transistors, the widespread use of isolation layers makes the Total Ionizing Dose (TID) a persistent threat to the operation of these devices in ionizing radiation environments. This paper provides a comprehensive review of the past three decades of research on the TID effects in transistors built across various scaled CMOS nodes, ranging from a 1.6-μm planar MOSFET technology to FinFETs produced in a 16-nm node. The focus is on understanding the evolution of the TID effects with the scaling down, as different oxides and channel layouts are employed in the CMOS processes.
Topics & Concepts
CMOSIonizing radiationNano-Absorbed doseDosimetryPhysicsMaterials scienceNuclear physicsOptoelectronicsRadiationIrradiationNuclear medicineMedicineQuantum mechanicsRadiation Effects in ElectronicsLow-power high-performance VLSI designSemiconductor materials and devices