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Comparative study of Cl2 + O2 and HBr + O2 plasma chemistries in respect to silicon reactive-ion etching process

Nomin Lim, Alexander Efremov, Kwang‐Ho Kwon

2021Vacuum15 citationsDOI

Topics & Concepts

ChemistryHalogenDissociation (chemistry)PlasmaIonKineticsAnalytical Chemistry (journal)Etching (microfabrication)Atom (system on chip)SiliconYield (engineering)Physical chemistryMaterials scienceChromatographyOrganic chemistryComputer scienceMetallurgyQuantum mechanicsEmbedded systemPhysicsLayer (electronics)AlkylPlasma Diagnostics and ApplicationsSemiconductor materials and devicesMetal and Thin Film Mechanics
Comparative study of Cl2 + O2 and HBr + O2 plasma chemistries in respect to silicon reactive-ion etching process | Litcius