Memory effect of vertically stacked hBN/QDs/hBN structures based on quantum-dot monolayers sandwiched between hexagonal boron nitride layer
Jaeho Shim, Joo Song Lee, Jaehyeon Lee, Yong Ju Yun, Sang Kyu Park, Basavaraj Angadi, Dong Ick Son
Topics & Concepts
MonolayerMaterials scienceQuantum dotProtein filamentElectrical conductorQuantum tunnellingLayer (electronics)Hexagonal boron nitrideOptoelectronicsNanotechnologyBoron nitrideComposite materialGrapheneAdvanced Memory and Neural ComputingQuantum and electron transport phenomenaSemiconductor materials and devices