Low-Temperature Direct Bonding of SiC to Si via Plasma Activation
Fengxuan Wang, Xiang Yang, Yongqiang Zhao, Jing‐Min Wu, Zhiyu Guo, Zhi He, Zhongchao Fan, Fuhua Yang
Abstract
We investigated the low-temperature direct bonding of SiC/Si via O2 plasma activation. After optimization, a high bonding efficiency of over 90% was obtained. Surface activation was achieved via reactive ion etching (RIE) O2 plasma for 30 s without significant bombardment damage. A smooth and void-free interface was observed by transmission electron microscopy (TEM), while a significant amorphous oxide layer was also detected. By increasing the annealing temperature from 150 to 300 ∘C, the amorphous layer decreased drastically from 48 nm to 11 nm. Based on systematic experiments and analysis, the mechanism of SiC/Si low-temperature plasma-activated bonding was discussed.