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First-Principles Study of Atomic Diffusion by Vacancy Defect of the L12-Al3M (M = Sc, Zr, Er, Y) Phase

Shuai Liu, Binbin Liao, Baohua Nie, Touwen Fan, Dongchu Chen, Jianglong Zhang, Yu Song

2023Molecules9 citationsDOIOpen Access PDF

Abstract

Atomic diffusion by the vacancy defect of L12-Al3M (M = Sc, Zr, Er, Y) was investigated based on a first-principles calculation. The point defect formation energies were firstly evaluated. Then, the migration energy for different diffusion paths was obtained by the climbing-image nudged elastic band (CI-NEB) method. The results showed that Al atomic and M atomic diffusions through nearest-neighbor jump (NNJ) mediated by Al vacancy (VAl) were, respectively, the preferred diffusion paths in Al3M phases under both Al-rich and M-rich conditions. The other mechanisms, such as six-jump cycle (6JC) and next-nearest-neighbor jump (NNNJ), were energetically inhibited. The order of activation barriers for NNJ(Al-VAl) was Al3Zr < Al3Y < Al3Er < Al3Sc. The Al3Sc phase had high stability with a high self-diffusion activation barrier, while the Al3Zr and Al3Y phases were relatively unstable with a low self-diffusion activation energy. Moreover, the atomic-diffusion behavior between the core and shell layers of L12-Al3M was also further investigated. Zr atoms were prone to diffusion into the Al3Y core layer, resulting in no stable core-shelled Al3(Y,Zr), which well agreed with experimental observation.

Topics & Concepts

Vacancy defectDiffusionMaterials scienceActivation energyPhase (matter)Atomic radiusAtomic diffusionEmbedded atom modelDiffusion barrierAtom (system on chip)CrystallographyChemical physicsChemistryMolecular dynamicsThermodynamicsComputational chemistryPhysical chemistryNanotechnologyLayer (electronics)PhysicsEmbedded systemComputer scienceOrganic chemistryIntermetallics and Advanced Alloy PropertiesAluminum Alloy Microstructure PropertiesAluminum Alloys Composites Properties