Micro-transfer-printed narrow-linewidth III-V-on-Si double laser structure with a combined 110 nm tuning range
Emadreza Soltanian, Grigorij Muliuk, Sarah Uvin, Dongbo Wang, Guy Lepage, Peter Verheyen, Joris Van Campenhout, Stefan Ertl, Johanna Rimböck, Nicolas Vaissière, Delphine Néel, Joan Manel Ramírez, J. Décobert, Bart Kuyken, Jing Zhang, Günther Roelkens
Abstract
In this work, we demonstrate for the first time a narrow-linewidth III-V-on-Si double laser structure with more than a 110 nm wavelength tuning range realized using micro-transfer printing (µTP) technology. Two types of pre-fabricated III-V semiconductor optical amplifiers (SOAs) with a photoluminescence (PL) peak around 1500 nm and 1550 nm are micro-transfer printed on two silicon laser cavities. The laser cavities are fabricated in imec's silicon photonics (SiPh) pilot line on 200 mm silicon-on-insulator (SOI) wafers with a 400 nm thick silicon device layer. By combining the outputs of the two laser cavities on chip, wavelength tunability over S+C+L-bands is achieved.