Mottness versus unit-cell doubling as the driver of the insulating state in 1T-TaS<sub>2</sub>.
C J Butler, M Yoshida, T Hanaguri, Y Iwasa
Abstract
, the sign of such a double-layer stacking pattern. However, spectroscopy at both terminations allows us to disentangle unit-cell doubling effects and determine that Mott localisation alone can drive gap formation. We also observe the collapse of Mottness at an extrinsically re-stacked termination, demonstrating that the microscopic mechanism of insulator-metal transitions lies in degrees of freedom of inter-layer stacking.
Topics & Concepts
StackingQuantum tunnellingCondensed matter physicsCharge (physics)Scanning tunneling microscopeElectronDegrees of freedom (physics and chemistry)SpectroscopyPhase (matter)PhysicsAtomic orbitalMaterials scienceSign (mathematics)State (computer science)Order (exchange)Solid-stateCharge orderingPhase diagramUnpaired electronSuperconductivityScanning tunneling spectroscopyChemistryAtomic force microscopyMott insulatorIntermediate state2D Materials and ApplicationsOrganic and Molecular Conductors ResearchElectronic and Structural Properties of Oxides