<scp>SiH monolayer</scp> : A promising <scp>two‐dimensional</scp> thermoelectric material
Aadil Fayaz Wani, Bindu Rani, Shobhna Dhiman, Utkirjon Sharopov, Kulwinder Kaur
Abstract
Stability and dynamics of structure, mechanical and thermoelectric properties of SiH monolayer have been reported in this work. After confirming the stability apprehensions, electronic structure calculations present the SiH as an indirect semiconducting monolayer with a bandgap of 2.19 eV. Calculations on elastic constant, deformation potential constant, effective mass, relaxation time, and mobility of charge carriers have been done to get the exact value of thermoelectric parameters. We analysed the variation of Seebeck coefficient, electrical conductivity and electronic thermal conductivity with respect to chemical potential at different temperatures and found that the high value of Seebeck coefficient and electrical conductivity along with low electronic thermal conductivity leads to a high value of ZeT ꞊ 2.185. SiH monolayer is being reported for the first time as a thermoelectric material and calculated thermoelectric properties show that SiH monolayer can be used efficiently in the field of thermoelectricity.