Advances in near-infrared avalanche diode single-photon detectors
Chen Liu, Haifeng Ye, Yanli Shi
Abstract
Avalanche-photodiode-based near-infrared single-photon detectors have seen rapid development in the last two decades because of their enormous internal gain, high sensitivity, fast response, small volume, and ease of integration. The InGaAs/InP near-infrared single-photon detector is the most widely used avalanche diode at present. Its device performance is still being continuously improved through the optimization of device structure and external quenching circuits. This paper analyzes the latest development and application of these InGaAs/InP photodiodes, then briefly reviews other near-infrared single-photon detection technologies based on new materials and new mechanisms.
Topics & Concepts
Avalanche photodiodeOptoelectronicsDetectorInfraredAvalanche diodeSingle-photon avalanche diodeDiodePhotodiodePhotonMaterials sciencePhotodetectorOpticsPhysicsBreakdown voltageVoltageQuantum mechanicsAdvanced Optical Sensing TechnologiesAdvanced Semiconductor Detectors and MaterialsSpectroscopy and Laser Applications