Exciton <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>g</mml:mi></mml:math> factors of van der Waals heterostructures from first-principles calculations
Tomasz Woźniak, Paulo E. Faria, Gotthard Seifert, Andrey Chaves, Jens Kunstmann
Abstract
Interlayer excitons present in van der Waals heterostructures of transition metal dichalcogenides exhibit remarkably distinct effective $g$ factors compared to their monolayer counterparts. Here, the authors employ first-principles calculations to investigate the interlayer exciton $g$ factors in MoSe${}_{2}$/WSe${}_{2}$ vdW heterostructures revealing that they are strongly spin and stacking dependent. Furthermore, within the present approach it is possible to unambiguously identify the nature of various previously measured interlayer exciton peaks. This first-principles approach can potentially be applied to calculate exciton $g$ factors of any semiconductor.
Topics & Concepts
Excitonvan der Waals forceHeterojunctionCondensed matter physicsStackingPhysicsExcitationMonolayerSemiconductorBasis setMaterials scienceQuantum mechanicsNanotechnologyNuclear magnetic resonanceMolecule2D Materials and ApplicationsPerovskite Materials and ApplicationsQuantum Dots Synthesis And Properties