Low-Temperature and High-Quality Growth of Bi<sub>2</sub>O<sub>2</sub>Se Layered Semiconductors <i>via</i> Cracking Metal–Organic Chemical Vapor Deposition
Minsoo Kang, Hyun‐Jun Chai, Han Beom Jeong, Han Beom Jeong, Cheolmin Park, In-Young Jung, Eunpyo Park, Mert Miraç Çiçek, Injun Lee, Byeong‐Soo Bae, Engin Durgun, Joon Young Kwak, Seungwoo Song, Sung‐Yool Choi, Hu Young Jeong, Hu Young Jeong, Kibum Kang
Abstract
Ternary metal-oxy-chalcogenides are emerging as next-generation layered semiconductors beyond binary metal-chalcogenides (i.e., MoS2). Among ternary metal-oxy-chalcogenides, especially Bi2O2Se has been demonstrated in field-effect transistors and photodetectors, exhibiting ultrahigh performance with robust air stability. The growth method for Bi2O2Se that has been reported so far is a powder sublimation based chemical vapor deposition. The first step for pursuing the practical application of Bi2O2Se as a semiconductor material is developing a gas-phase growth process. Here, we report a cracking metal–organic chemical vapor deposition (c-MOCVD) for the gas-phase growth of Bi2O2Se. The resulting Bi2O2Se films at very low growth temperature (∼300 °C) show single-crystalline quality. By taking advantage of the gas-phase growth, the precise phase control was demonstrated by modulating the partial pressure of each precursor. In addition, c-MOCVD-grown Bi2O2Se exhibits outstanding electrical and optoelectronic performance at room temperature without passivation, including maximum electron mobility of 127 cm2/(V·s) and photoresponsivity of 45134 A/W.