Thermal–Mechanical and Signal Reliability of a New Differentiated TSV
Ziyu Liu, Han Jiang, Zhiyuan Zhu, Lin Chen, Qingqing Sun, Yabin Sun, David Wei Zhang
Abstract
The thermal–mechanical and signal reliability of through-silicon via (TSV) occupies an important position in three-dimensional integrated circuits (3D-ICs). However, few studies combined the thermal–mechanical and signal reliability are found. In the work, a new differentiated structure of TSV is proposed to decrease the peak thermal stress without affecting signal integrity. The effect of TSV diameter on the peak thermal stress and its location is deeply investigated to decrease the stress. Compared with regular TSV, the differentiated TSV can reduce 22% peak thermal stress and 68% occupied silicon area. More differentiated TSVs can be placed in the same Si substrate by considering the influence of thermal stress between TSVs. Meanwhile, the differentiated TSV can better shield crosstalk noise with ensuring signal integrity.