Two-dimensional-materials-based transistors using hexagonal boron nitride dielectrics and metal gate electrodes with high cohesive energy
Yaqing Shen, Kaichen Zhu, Yiping Xiao, Dominic Waldhör, Abdulrahman H. Basher, Theresia Knobloch, Sebastián Pazos, Xianhu Liang, Wenwen Zheng, Yue Yuan, J.B. Roldán, Udo Schwingenschlögl, He Tian, Huaqiang Wu, Thomas F. Schranghamer, Nicholas Trainor, Joan M. Redwing, Saptarshi Das, Tibor Grasser, Mario Lanza
Topics & Concepts
Materials scienceHexagonal boron nitrideDielectricOptoelectronicsElectrodeHexagonal crystal systemMetalBoron nitrideTransistorNitrideNanotechnologyMetallurgyElectrical engineeringGrapheneVoltageCrystallographyEngineeringChemistryPhysical chemistryLayer (electronics)Graphene research and applications2D Materials and ApplicationsAdvanced Memory and Neural Computing