Super-Lamination HZO/ZrO₂/HZO of Ferroelectric Memcapacitors With Morphotropic Phase Boundary (MPB) for High Capacitive Ratio and Non-Destructive Readout
Zhenxiu Lou, B.-R. Chen, K.-Y. Hsiang, Yii-Tay Chang, Cheng‐Hsien Liu, Hsien‐Cheng Tseng, Han-Tsung Liao, Pin Su, M. H. Lee
Abstract
High Zr concentration of super-lamination (SL) HZO/ZrO2/HZO (HZZ) with morphotropic phase boundary (MPB) to enhance dielectric constant to 46 and 2Pr of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$44~\mu $ </tex-math></inline-formula>C/cm2 is employed in ferroelectric capacitive memory (FCM). The proposed HZZ memcapacitor demonstrates a remarkably high CHCS/CLCS ratio of 245x with 3 V, excellent data retention >104 s, multi-level cell (MLC), and achieves non-destructive read operation (NDRO) for 109 cycles. The MPB-based SL technique for HZZ is a promising concept that elevates the permittivity for FCM/memcapacitor non-volatile memory (NVM) or advanced logic applications.