Interplay between oxygen defects and dopants: effect on structure and performance of HfO<sub>2</sub>-based ferroelectrics
Monica Materano, Patrick D. Lomenzo, Alfred Kersch, Min Hyuk Park, Thomas Mikolajick, Uwe Schroeder
Abstract
A review on ferroelectric phase formation and reliability in HfO<sub>2</sub>-based thin films and semiconductor devices.
Topics & Concepts
DopantMaterials scienceFerroelectricityReliability (semiconductor)SemiconductorOxygenPhase (matter)Thin filmDopingOptoelectronicsEngineering physicsNanotechnologyChemistryThermodynamicsDielectricEngineeringPhysicsOrganic chemistryPower (physics)Ferroelectric and Negative Capacitance DevicesSemiconductor materials and devicesMXene and MAX Phase Materials