Ultra-low dark current back-illuminated AlGaN-based solar-blind ultraviolet photodetectors with broad spectral response
Feng Xie, Yan Gu, Zhijia Hu, Benli Yu, Guofeng Yang
Abstract
A high performance AlGaN-based back-illuminated solar-blind ultraviolet (UV) p-i-n photodetectors (PDs) are fabricated on sapphire substrates. The fabricated PD exhibits ultra-low dark current of less than 0.15 pA under -5 V bias, which corresponds to a dark current density of <1.5×10 −11 A/cm 2 . In particular, the PD shows broad spectral response from 240 nm to 285 nm with an excellent solar-blind/UV rejection ratio of more than 10 3 . The peak responsivity at the wavelength of 275 nm reaches 0.19 A/W at -5 V, corresponding to a maximum quantum efficiency of approximately 88%. Based on the absence of any anti-reflection coating, this corresponds to nearly 100% internal quantum efficiency. In addition, the PD shows a quite fast response of 0.62 ms. To the best of our knowledge, this is the record low dark current density and broadest response band reported for the back-illuminated AlGaN-based solar-blind UV detectors.