Prolonged electron lifetime in sulfur vacancy-rich ZnCdS nanocages by interstitial phosphorus doping for photocatalytic water reduction
Qiaohong Zhu, Zehong Xu, Qiuying Yi, Muhammad Nasir, Mingyang Xing, Bocheng Qiu, Jinlong Zhang
Abstract
Sulfur vacancy-rich ZnCdS nanocages with interstitial P dopant atoms were fabricated. The promoted Fermi level caused by interstitial P doping facilitates the S vacancy level to be an effective electron trapping center, thus enhancing the photocatalytic performance.
Topics & Concepts
NanocagesVacancy defectPhotocatalysisDopantMaterials scienceDopingSulfurFermi levelTrappingPhotochemistryElectronInorganic chemistryCrystallographyChemistryOptoelectronicsCatalysisMetallurgyQuantum mechanicsPhysicsEcologyBiologyBiochemistryAdvanced Photocatalysis TechniquesPerovskite Materials and Applications2D Materials and Applications