Switching the perpendicular magnetization of a magnetic insulator by magnon transfer torque
Chunyu Guo, Caihua Wan, Mingkun Zhao, Chi Fang, Tianyi Ma, X. Wang, Z. R. Yan, Wenqing He, Y. W. Xing, J. F. Feng, Xiufeng Han
Abstract
Magnon transfer torque (MTT) is regarded as capable of manipulating spin by magnons or spin waves only without spatial movement of electrons, which is a key to enrich the toolbox for magnonics. Here using a magnon current through an antiferromagnetic NiO spacer, which can be deep into a magnetic insulator ${\mathrm{Y}}_{3}{\mathrm{Fe}}_{5}{\mathrm{O}}_{12}$ (YIG), we demonstrated the perpendicular magnetization of the YIG in a YIG/NiO/Pt heterostructure could be switched. When the thickness of the magnon channel NiO was 1.5 nm, the magnon current could still maintain about $84%$ of the spin current for the YIG/Pt control device, indicating high efficiency of the NiO spacer in transferring magnon torque. Switching the perpendicular magnetization in the YIG/NiO/Pt heterostructures unambiguously verified the effect of magnon transfer torque (MTT), which may advance the development of magnonic memories and logics.