The variation of intrinsic defects in XTe (X = Ge, Sn, and Pb) induced by the energy positions of valence band maxima
Haiyang Huo, Yuxiang Wang, Lili Xi, Jiong Yang, Wenqing Zhang
Abstract
The difference of vacancy formation energy between PbTe and Ge (Sn)Te can be understood by the relative position of valence band maximum (VBM) energy levels. The higher the VBM, the lower the formation energy of acceptor defect (such as V<sub>x</sub>).
Topics & Concepts
Materials scienceVacancy defectValence bandAcceptorMaximaValence (chemistry)GermaniumBand gapCondensed matter physicsCrystallographyMolecular physicsOptoelectronicsChemistryPhysicsSiliconArt historyArtPerformance artOrganic chemistryChalcogenide Semiconductor Thin FilmsQuantum Dots Synthesis And PropertiesAdvanced Thermoelectric Materials and Devices