Layer-resolved ultrafast extreme ultraviolet measurement of hole transport in a Ni-TiO <sub>2</sub> -Si photoanode
Scott K. Cushing, Ilana J. Porter, Bethany R. de Roulet, Angela Lee, Brett M. Marsh, Szilárd Szőke, Mihai E. Vaida, Stephen R. Leone
Abstract
and the initial hole mobility in Si, are fit from these transient spectra and match well with values reported previously.
Topics & Concepts
PhotoexcitationMaterials sciencePicosecondOptoelectronicsUltravioletSiliconCharge carrierUltrashort pulseElectronUltrafast laser spectroscopyElectron mobilityMolecular physicsAtomic physicsExcited stateSpectroscopyOpticsPhysicsQuantum mechanicsLaserIon-surface interactions and analysisThin-Film Transistor TechnologiesIntegrated Circuits and Semiconductor Failure Analysis