Litcius/Paper detail

24.1 A 24-to-30GHz Watt-Level Broadband Linear Doherty Power Amplifier with Multi-Primary Distributed-Active-Transformer Power-Combining Supporting 5G NR FR2 64-QAM with &gt;19dBm Average P<sub>out</sub> and &gt;19% Average PAE

Fei Wang, Hua Wang

202047 citationsDOI

Abstract

The continuous worldwide demand for multi-Gb/s data-rate has driven the rapid development and standardization of 5G New Radio (NR) specifications in the mmwave bands [1]-[3]. As a result, there is a surge of interest in high-performance yet compact mm-wave 5G front-end chipsets to enable large-aperture phased arrays. In User Equipment (UE) devices, the limited form factor restricts the number of antenna array elements, e.g., 2×2, which dramatically increases the output power (Pout) requirement per element [1], [4]. For base stations, although some applications require only moderate element Pout and high antenna gain, high Pout capabilities allow array-divisions/sub-arrays for concurrent multi-stream mmwave links.

Topics & Concepts

Electrical engineeringBroadbandChipsetAmplifierEngineeringBase stationElectronic engineeringCrest factorTelecommunicationsVoltageCMOSChipAdvanced Power Amplifier DesignRadio Frequency Integrated Circuit DesignMicrowave Engineering and Waveguides