High performance photodetectors using porous silicon-TiO ₂ heterostructure

Abstract

Abstract In this study, a feasible approach for UV–vis photodetection using hybrid heterojunction by integrating porous silicon and TiO 2 thin film is demonstrated. The photodetector demonstrates excellent photoresponse by three orders of magnitude enhancement and fast rise/decay time constants of 0.16/0.14 ms. Under small bias (1 V), the photodetector exhibits very high responsivity up to 40 A W −1 at 532 nm irradiation over a broadband wavelength range from 300–700 nm. The heterostructure geometry yields high-performance devices useful for many optoelectronic and biomedical applications.

Topics & Concepts