Principles of semiconductor devices
L. Solymár, Donald D. Walsh, R.R.A. Syms
Abstract
Abstract Describes the operation of many different semiconductor devices, starting with the p-n junction (in equilibrium, forward bias and reverse bias), and shows how similar principles underpin the first important type of transistor, the bipolar transistor. Discusses more complex layered structures such as metal-semiconductor and metal-insulator-semiconductor junctions, including the role of surface states. Continues to variations on the diode theme - the tunnel diode, backward diode, Zener diode and varactor diode - and then the second important transistor type, the MOSFET. Discusses the formation of junctions between materials with different bandgap (heterostructures) and the potential advantages of wide-bandgap semiconductors. Describes alternative devices such as CCD arrays, the silicon controlled rectifier, the Gunn diode and semiconductor-based sensors including strain gauges, magnetic field sensors and gas sensors. Explains the details of microelectronic circuit fabrication, and its more recent adaptation to microelectromechanical systems and nanoelectronics. Concludes by discussing the social implications of microelectronics technology.