Improved electrical characteristics of Ge nMOSFET with suitable nitrogen content in starting interfacial layer
Dun‐Bao Ruan, Kuei‐Shu Chang‐Liao, Wen-Yen Hsu, Shih-Han Yi
Topics & Concepts
Materials scienceMOSFETGermaniumGate dielectricEquivalent oxide thicknessOptoelectronicsNitrogenDielectricLeakage (economics)Gate oxideTransistorElectrical engineeringSiliconChemistryMacroeconomicsEconomicsEngineeringOrganic chemistryVoltageSemiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit DesignNanowire Synthesis and Applications