Hysteresis in the transfer characteristics of MoS <sub>2</sub> field effect transistors: gas, temperature and photo-irradiation effect
Muhammad Shamim Al Mamun, Yasuyuki Sainoo, Tsuyoshi Takaoka, Atsushi Ando, Tadahiro Komeda
Abstract
Light irradiation, ambient gas, and temperature all significantly increase hysteresis. Our observations show distinctive hysteretic behavior in MoS 2 -FET in an oxygen environment at 1 atm.
Topics & Concepts
HysteresisIrradiationMaterials scienceOxygenField-effect transistorOptoelectronicsTransistorCondensed matter physicsChemistryElectrical engineeringVoltagePhysicsEngineeringOrganic chemistryNuclear physics2D Materials and ApplicationsFerroelectric and Negative Capacitance DevicesMXene and MAX Phase Materials