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40 GHz high-efficiency Michelson interferometer modulator on a silicon-rich nitride and thin-film lithium niobate hybrid platform

Xingrui Huang, Yang Liu, Zezheng Li, Huan Guan, Qingquan Wei, Manqing Tan, Zhiyong Li

2021Optics Letters28 citationsDOI

Abstract

We propose and demonstrate a Michelson interferometer modulator with integrated Bragg reflectors on a silicon-rich nitride-thin-film lithium niobate hybrid platform. High-reflectivity Bragg reflectors are placed at the ends of both arms, which double the electro-optic (E-O) interaction length and reduce the velocity mismatch between the microwave and optical wave. The presented Michelson interferometer modulator achieves a measured half-wave voltage length product as low as 1.06 V cm and high-speed modulation up to 70 Gbps. A 3-dB E-O bandwidth beyond 40 GHz is also achieved, which is, to the best of our knowledge, the highest modulation bandwidth of Michelson interferometer modulators.

Topics & Concepts

Lithium niobateOpticsMaterials scienceMichelson interferometerInterferometryOptical modulatorOptoelectronicsSilicon nitrideBandwidth (computing)Modulation (music)Phase modulationSiliconPhysicsTelecommunicationsComputer scienceAcousticsPhase noisePhotorefractive and Nonlinear OpticsPhotonic and Optical DevicesAdvanced Fiber Laser Technologies
40 GHz high-efficiency Michelson interferometer modulator on a silicon-rich nitride and thin-film lithium niobate hybrid platform | Litcius