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A 0.0067-mm<sup>2</sup> 12-bit 20-MS/s SAR ADC Using Digital Place-and-Route Tools in 40-nm CMOS

Yao-Hung Hubert Tsai, Shen-Iuan Liu

2022IEEE Transactions on Very Large Scale Integration (VLSI) Systems18 citationsDOI

Abstract

A 12-bit 20-MS/s asynchronous successive approximation register (SAR) analog-to-digital converter (ADC) is presented by using the digital place-and-route (DPR) tools. The macrocells for the capacitive digital-to-analog converter, the bootstrapped switch, and the dynamic comparator are presented. The custom standard cells for the dynamic SAR logic are also presented. By using the macrocells and the custom standard ones, the layout of this SAR ADC is completed by using the DPR tools. Several techniques are presented to improve the parasitic capacitances, the current density of the metal interconnections, and the nonideal effects caused by the DPR tools. This SAR ADC is fabricated in 40-nm CMOS technology and its active area is 0.0067 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . To compare with the full-custom method, the proposed DPR flow has speeded up by a factor of 288 to complete the interconnection wires. Its power dissipation is 363 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{W}$ </tex-math></inline-formula> at 20 MS/s and the calculated Walden FoM is 23 fJ/c. step at Nyquist frequency.

Topics & Concepts

Successive approximation ADCCMOSComparatorComputer science12-bitAsynchronous communicationElectronic engineeringCapacitancePhysicsElectrical engineeringTopology (electrical circuits)EngineeringVoltageTelecommunicationsElectrodeQuantum mechanicsAnalog and Mixed-Signal Circuit DesignAdvancements in Semiconductor Devices and Circuit DesignLow-power high-performance VLSI design
A 0.0067-mm<sup>2</sup> 12-bit 20-MS/s SAR ADC Using Digital Place-and-Route Tools in 40-nm CMOS | Litcius