Commercially Available N-polar GaN HEMT Epitaxy for RF Applications
Davide Bisi, Brian Romanczyk, Xiang Liu, Geetak Gupta, Tobias Brown-Heft, R. Birkhahn, Rakesh Lal, Carl J. Neufeld, S. Keller, P. Parikh, Umesh K. Mishra, L. McCarthy
Abstract
Transphorm Inc. is supplying N-polar GaN epitaxial wafers for ultra-high-performance RF and mm-wave electronics on sapphire and silicon carbide (SiC) substrates. In this work, we report on the manufacturing facility, epitaxial growth on both 100-mm sapphire and 100-mm SiC, and device electrical performance. Results show good material quality, a low 2DEG sheet resistance with good non-uniformity, and good dynamic behavior with no current dispersion at 60 V at both room temperature and high temperature (150°C).
Topics & Concepts
Materials scienceEpitaxyHigh-electron-mobility transistorOptoelectronicsSapphireSilicon carbideWaferWide-bandgap semiconductorGallium nitrideSheet resistanceTransistorElectrical engineeringVoltageNanotechnologyComposite materialOpticsLayer (electronics)EngineeringPhysicsLaserGaN-based semiconductor devices and materialsGa2O3 and related materialsZnO doping and properties