Spiking Dynamics in Dual Free Layer Perpendicular Magnetic Tunnel Junctions
Louis Farcis, B. M. S. Teixeira, Philippe Talatchian, D. Salomoni, U. Ebels, S. Auffret, B. Diény, Frank Alice Mizrahi, Julie Grollier, R. C. Sousa, L. D. Buda-Prejbeanu
Abstract
Spintronic devices have recently attracted a lot of attention in the field of unconventional computing due to their non-volatility for short- and long-term memory, nonlinear fast response, and relatively small footprint. Here we demonstrate experimentally how voltage driven magnetization dynamics of dual free layer perpendicular magnetic tunnel junctions can emulate spiking neurons in hardware. The output spiking rate was controlled by varying the dc bias voltage across the device. The field-free operation of this two-terminal device and its robustness against an externally applied magnetic field make it a suitable candidate to mimic the neuron response in a dense neural network. The small energy consumption of the device (4-16 pJ/spike) and its scalability are important benefits for embedded applications. This compact perpendicular magnetic tunnel junction structure could finally bring spiking neural networks to sub-100 nm size elements.