Physics-Based Analytical Formulation of the Soft Error Rate in CMOS Circuits
Jean‐Luc Autran, Daniela Munteanu
Abstract
The exponential dependence of the soft error rate (SER) with critical charge in CMOS circuits, empirically proposed by Hazucha and Svensson, is derived in the framework of the diffusion–collection approach. A full analytical formulation is established, linking the SER with physical and technological parameters, notably the circuit supply voltage, carrier diffusion coefficient, and ion characteristics.
Topics & Concepts
CMOSSoft errorDiffusionElectronic circuitExponential functionVoltageElectronic engineeringElectrical engineeringPhysicsComputer scienceMathematicsEngineeringMathematical analysisThermodynamicsRadiation Effects in ElectronicsSemiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit Design