A trapping tolerant drain current based temperature measurement of <i>β</i>-Ga2O3 MOSFETs
Xiang Zheng, Taylor Moule, James W. Pomeroy, Masataka Higashiwaki, Martin Kuball
Abstract
The drain current temperature dependence is an efficient way to determine the channel temperature in semiconductor devices; however, it has been challenging to use due to the potential interference of trapping effects. A trapping tolerant method is proposed, illustrated here for Ga2O3 MOSFETs, making in situ temperature measurements possible, allowing a thermal resistance of 59 K·mm/W to be measured in Ga2O3 MOSFETs. However, neglecting the effect of trapping causes an error of ∼15% in the channel temperature measured using the drain current. 3D simulations show that the measured channel temperature is the average temperature value between source and drain contact.