Improved resistive switching characteristics of a multi-stacked HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> RRAM structure for neuromorphic and synaptic applications: experimental and computational study
Ejaz Ahmad Khera, Chandreswar Mahata, Muhammad Imran, Niaz Ahmad Niaz, Fayyaz Hussain, R.M. Arif Khalil, Umbreen Rasheed, SungjunKim
Abstract
), total density of states (TDOS), partial density of states (PDOS) and isosurface three-dimensional charge density analysis was performed using WEIN2k and VASP simulation packages under Perdew-Burke-Ernzerhof _Generalized Gradient approximation (PBE-GGA). The experimental and theoretical outcomes can help in finding proper stacking of the active resistive switching (RS) layer for resistive random-access memory (RRAM) applications.
Topics & Concepts
Neuromorphic engineeringResistive random-access memoryMaterials scienceOptoelectronicsResistive touchscreenNanotechnologyComputer scienceArtificial neural networkElectrical engineeringArtificial intelligenceEngineeringVoltageComputer visionAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesSemiconductor materials and devices