Bonding of LiNbO <sub>3</sub> and Si wafers at room temperature using Si nanolayers
Kaname Watanabe, Jun Utsumi, Ryo Takigawa
Abstract
Abstract We report the room temperature bonding of LiNbO 3 and Si wafers based on the use of Si nanolayers. The proposed method employs physical sputtering, which simultaneously activates the surface of an etched Si wafer and forms a Si nanolayer on the surface of a LiNbO 3 wafer. Following sputtering, both wafers are immediately brought into contact and the newly formed Si nanolayer acts as a nanoadhesive. The data presented herein demonstrate that this technique is more effective at directly bonding LiNbO 3 and Si than the conventional surface-activated bonding method. Following activation, the bonded surface energy, which reflects the bond strength, was estimated to be approximately 2.2 J m −2 . This result indicates that the bonding was strong enough to withstand the processes associated with the fabrication of microelectronics devices, including wafer thinning.