Control of Hybrid Exciton Lifetime in MoSe<sub>2</sub>/WS<sub>2</sub> Moiré Heterostructures
Haowen Xu, Jiangcai Wang, Huan Liu, Shihong Chen, Zejun Sun, Chong Wang, Rui Han, Yong Wang, Yutang Wang, Zihao Wang, Shuchun Huang, Lingwei Ma, Dameng Liu
Abstract
Abstract Hybrid excitons, characterized by their strong oscillation strength and long lifetimes, hold great potential as information carriers in semiconductors. They offer promising applications in exciton‐based devices and circuits. MoSe 2 /WS 2 heterostructures represent an ideal platform for studying hybrid excitons, but how to regulate the exciton lifetime has not yet been explored. In this study, layer hybridization is modulated by applying electric fields parallel or antiparallel to the dipole moment, enabling us to regulate the exciton lifetime from 1.36 to 4.60 ns. Furthermore, the time‐resolved photoluminescence decay traces are measured at different excitation power. A hybrid exciton annihilation rate of 8.9 × 10 −4 cm 2 s −1 is obtained by fitting. This work reveals the effects of electric fields and excitation power on the lifetime of hybrid excitons in MoSe 2 /WS 2 1.5° moiré heterostructures, which play important roles in high photoluminescence quantum yield optoelectronic devices based on transition‐metal dichalcogenides heterostructures.