Multiple-State Nonvolatile Memory Based on Ultrathin Indium Oxide Film via Liquid Metal Printing
Chang-Hsun Huang, Chen-Yuan Weng, Kuan‐Hung Chen, Yi Chou, Yi Chou, Tian‐Li Wu, Yi‐Chia Chou, Yi‐Chia Chou
Abstract
In this work, the ultrathin two-dimensional (2D) indium oxide (InO x ) with a large area of more than 100 μm 2 and a high degree of uniformity was automatically peeled off from indium by the liquid-metal printing technique. Raman and optical measurements revealed that 2D-InO x has a polycrystalline cubic structure. By altering the printing temperature which affects the crystallinity of 2D-InO x, the mechanism of the existence and disappearance of memristive characteristics was established. The tunable characteristics of the 2D-InO x memristor with reproducible one-order switching was manifest from the electrical measurements. Further adjustable multistate characteristics of the 2D-InO x memristor and its resistance switching mechanism were evaluated. A detailed examination of the memristive process demonstrated the Ca 2+ mimic dynamic in 2D-InO x memristors as well as the fundamental principles underlying biological and artificial synapses. These surveys allow us to comprehend a 2D-InO x memristor using the liquid-metal printing technique and could be applied to future neuromorphic applications and in the field of revolutionary 2D material exploration.