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Acceleration of the yellow band luminescence in GaN layers via Si and Ge doping

Tomáš Vaněk, Vítězslav Jarý, Tomáš Hubáček, František Hájek, K. Kuldová, Zuzana Gedeonová, Vladimír Babin, Z. Remeš, M. Buryi

2022Journal of Alloys and Compounds14 citationsDOI

Topics & Concepts

LuminescenceDopingRadioluminescencePhotoluminescenceMaterials scienceDopantAnalytical Chemistry (journal)AcceptorOptoelectronicsOpticsChemistryCondensed matter physicsPhysicsChromatographyDetectorScintillationGaN-based semiconductor devices and materialsGa2O3 and related materialsZnO doping and properties
Acceleration of the yellow band luminescence in GaN layers via Si and Ge doping | Litcius