Topological materials for high performance transverse thermoelectrics
Yu Pan, Bin He, Honghui Wang, Claudia Felser
Abstract
Transverse thermoelectrics based on Nernst-Ettingshausen effect have been widely investigated in the 20th century. Old results of transverse thermoelectrics have shown low performances and usually require large magnetic fields. In recent years, the surge of topological materials has stimulated the development of high performance transverse thermoelectrics, including both ordinary Nernst effect (ONE) and anomalous Nernst effect (ANE). High transverse thermoelectric performance is achieved by topological semimetals owing to their unique properties such as sharp band dispersion, ambipolar charge carrier transport, and large Berry curvature. In this perspective, we first review the advantages of transverse thermoelectrics and the origin of ONE and ANE phenomena. We then summarize the high transverse thermoelectric performance reported in topological materials and discuss outlooks for advancing transverse thermoelectrics in future studies.