Interatomic potentials of W–V and W–Mo binary systems for point defects studies
Yangchun Chen, Xichuan Liao, Ning Gao, Wangyu Hu, Fei Gao, Huiqiu Deng
Topics & Concepts
Vacancy defectTungstenInteratomic potentialCrystallographic defectLattice constantMolybdenumStacking-fault energyStacking faultEmbedded atom modelAtom (system on chip)Binary numberAtomic physicsDislocationMaterials scienceThermodynamicsBinding energyChemistryMolecular dynamicsCrystallographyComputational chemistryPhysicsQuantum mechanicsMetallurgyEmbedded systemArithmeticComputer scienceMathematicsDiffractionFusion materials and technologiesAdvanced materials and compositesNuclear Materials and Properties