Generalized Constant Current Method for Determining MOSFET Threshold Voltage
Matthias Bucher, Nikolaos Makris, Loukas Chevas
Abstract
A novel method for extracting threshold voltage and substrate effect parameters of MOSFETs with constant current bias at all levels of inversion is presented. This generalized constant-current (GCC) method exploits the charge-based model of MOSFETs to extract threshold voltage and other substrate-effect-related parameters. The method is applicable over a wide range of current throughout weak and moderate inversion, and to some extent in strong inversion. This method is particularly useful when applied for MOSFETs presenting edge conduction effect (subthreshold hump) in CMOS processes using shallow trench isolation (STI).
Topics & Concepts
Subthreshold conductionMOSFETShallow trench isolationThreshold voltageInversion (geology)Constant currentMaterials scienceVoltageOptoelectronicsConstant (computer programming)CMOSElectronic engineeringElectrical engineeringComputational physicsPhysicsTrenchComputer scienceTransistorEngineeringNanotechnologyLayer (electronics)BiologyStructural basinPaleontologyProgramming languageSemiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit DesignIntegrated Circuits and Semiconductor Failure Analysis