Bufferless III–V photodetectors directly grown on (001) silicon-on-insulators
Ying Xue, Yu Han, Yi Wang, Zunyue Zhang, Hon Ki Tsang, Kei May Lau
Abstract
Efficient photodetectors (PDs) and lasers are critical components in silicon photonics technology. Here, we demonstrate bufferless InP/InGaAs PDs, directly grown on (001) silicon-on-insulators. The nano-scale PDs exhibit a high photoresponsivity of 1.06 A/W at 1.55 µm, and a wide operating range from 1450 nm to 1650 nm. The bufferless feature of nano-PDs facilitates effective interfacing with Si waveguides, thus paving the path toward fully integrated silicon photonics circuits.
Topics & Concepts
PhotodetectorSiliconInterfacingPhotonicsOptoelectronicsMaterials scienceSilicon photonicsPhotonic integrated circuitOpticsDiodeHybrid silicon laserComputer sciencePhysicsComputer hardwarePhotonic and Optical DevicesPhotonic Crystals and ApplicationsSemiconductor Quantum Structures and Devices