Abnormal Metal–Semiconductor-Like Transition and Exceptional Enhanced Superconducting State in Pressurized Restacked TaS<sub>2</sub>
Qing Dong, Jie Pan, Shujia Li, Chenyi Li, Tao Lin, Бо Лю, Бо Лю, Ran Liu, Quanjun Li, Fuqiang Huang, Bingbing Liu, Bingbing Liu
Abstract
Interlayer coupling and stacking order play essential roles in shaping the exotic electronic properties of two-dimensional materials. Here, we employ restacked TaS 2 ─a novel transition metal dichalcogenide (TMD) with weak vdW bonding and twisted angles─to investigate the strain effects of interlayer modulation on the electronic properties. Under pressure, an unexpected transition from metallic to semiconducting-like states occurs. Superconductivity coexists with the semiconducting-like state over a wide pressure range, which has never before been observed in TMDs. Upon further compression, a new superconducting SC-II state emerges without structural evolution and gradually replaces the initial SC-I state. The emerging SC-II state exhibits robust zero-resistance superconductivity and an ultrahigh upper critical field. The abundant electronic state changes in RS-TaS 2 are strongly related to band-structure engineering resulting from pressure-induced interlayer stacking angle modulation. Our results reveal the remarkable effect of interlayer rearrangement on electronic properties and provide a special way to explore the unique properties of 2D materials.