A highly stable temperature sensor based on Au/Cu/n-Si Schottky barrier diodes dependent on the inner metal thickness
Hasan Efeoğlu, A. Türüt
Abstract
Abstract We have fabricated Au/n-Si (D1), Au/Cu/n-Si (D2), Au/Cu(4 nm)/n-Si (D3) and Au/Cu(2 nm)/n-Si (D4) Schottky barrier diodes (SBDs). The thickness of the Cu Schottky contact (SC) films for diodes D2, D3 and D4 was chosen as 100, 4 and 2 nm, respectively. We investigated the thermal sensitivity from the voltage–temperature ( V–T ) characteristics of the SBDs at different current levels. The V–T measurements were done in the temperature range from 10 to 320 K with steps of 2 K at different current levels from 50 nA to 141.70 µ A. The V–T curves showed a good degree of linearity for all SBDs. The slope d V /d T = α ( α is the thermal sensitivity coefficient) for each diode decreased with increasing current from 50 nA to 141.70 µ A. However, the SBDs with a Cu SC had approximately the same α value independent of metal thickness at the same current level. That is, the value of the thermal sensitivity coefficient changed from approximately 2.48 mV K −1 at 50 nA to 1.82 at 141.70 µ A for the SBDs with a Cu SC independent of metal thickness. Furthermore, the α versus current level plots of the diodes exhibited a linear behavior. The intercept α 0 and slope d α / d I values of the α versus current level plots were obtained as 2.80 mV K −1 and −0.0843 mV A –1 K −1 for D2, and 2.85 mV K −1 and −0.092 mV A –1 K −1 for D3 and 2.83 mV K −1 and −0.0876 mV A –1 K −1 for D4. These values are very close to each other and the difference between the slope (d α / d I ) values is small enough to be neglected.