GeSe photovoltaics: doping, interfacial layer and devices
Matthew J. Smiles, Thomas P. Shalvey, Luke Thomas, Theodore D. C. Hobson, Leanne A. H. Jones, Laurie J. Phillips, Christopher H. Don, Thomas Beesley, P. Thakur, Tien‐Lin Lee, K. Durose, Jonathan D. Major, T. D. Veal
Abstract
Ag-doped GeSe has been successfully grown and compared to undoped GeSe with XRD, photoemissions, ICP-OES and CV. The undoped and Ag-doped GeSe were included in PV devices with the champion device structure and J – V curve shown.
Topics & Concepts
Materials scienceDopingSelenideLayer (electronics)Solar cellGermaniumStoichiometryPhotovoltaicsOptoelectronicsAnalytical Chemistry (journal)NanotechnologySiliconPhotovoltaic systemChemistryPhysical chemistryMetallurgySeleniumEcologyBiologyChromatographyChalcogenide Semiconductor Thin FilmsQuantum Dots Synthesis And PropertiesPhase-change materials and chalcogenides