Statistical Characterization of Time-Dependent Variability Defects Using the Maximum Current Fluctuation
P. Sarazá-Canflanca, J. Martín-Martínez, R. Castro‐López, E. Roca, R. Rodrı́guez, F.V. Fernández, M. Nafrı́a
Abstract
This article presents a new methodology to extract, at a given operation condition, the statistical distribution of the number of active defects that contribute to the observed device time-dependent variability, as well as their amplitude distribution. Unlike traditional approaches based on complex and time-consuming individual analysis of thousands of current traces, the proposed approach uses a simpler trace processing, since only the maximum and minimum values of the drain current during a given time interval are needed. Moreover, this extraction method can also estimate defects causing small current shifts, which can be very complex to identify by traditional means. Experimental data in a wide range of gate voltages, from near-threshold up to nominal operation conditions, are analyzed with the proposed methodology.