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Extremely bias stress stable enhancement mode sol–gel-processed SnO2 thin-film transistors with Y2O3 passivation layers

Changmin Lee, Won‐Yong Lee, Do Won Kim, Hyeon Joong Kim, Jin‐Hyuk Bae, In Man Kang, Doohyeok Lim, Kwangeun Kim, Jaewon Jang

2021Applied Surface Science31 citationsDOI

Topics & Concepts

PassivationMaterials scienceThin-film transistorOptoelectronicsSemiconductorHysteresisThreshold voltageStress (linguistics)TransistorLayer (electronics)NanotechnologyVoltageElectrical engineeringCondensed matter physicsPhilosophyLinguisticsEngineeringPhysicsThin-Film Transistor TechnologiesZnO doping and propertiesSilicon Nanostructures and Photoluminescence
Extremely bias stress stable enhancement mode sol–gel-processed SnO2 thin-film transistors with Y2O3 passivation layers | Litcius