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Vector Electrometry in a Wide-Gap-Semiconductor Device Using a Spin-Ensemble Quantum Sensor

Bang Yang, Takuya Murooka, Kosuke Mizuno, Kwangsoo Kim, Hiromitsu Kato, Toshiharu Makino, Masahiko Ogura, Satoshi Yamasaki, Marek E. Schmidt, Hiroshi Mizuta, Amir Yacoby, Mutsuko Hatano, Takayuki Iwasaki

2020Physical Review Applied29 citationsDOIOpen Access PDF

Abstract

Nitrogen-vacancy (N-V) centers in diamond work as a quantum electrometer. Using an ensemble state of N-V centers, we propose vector electrometry and demonstrate measurements in a diamond electronic device. A transverse electric field applied to the N-V axis under a high voltage is measured, while applying a transverse magnetic field. The response of the energy-level shift against the electric field is significantly enhanced compared with that against an axial magnetic field. Repeating the measurement of the transverse electric field for multiple N-V axes, we obtain the components of the electric field generated in the device.

Topics & Concepts

Transverse planeElectric fieldPhysicsMagnetic fieldDiamondTransverse fieldVoltageQuantumVector potentialTransverse magneticCondensed matter physicsField (mathematics)Work (physics)OptoelectronicsQuantum sensorElectric potentialNuclear magnetic resonanceElectric susceptibilityState (computer science)Quantum electrodynamicsElectric currentDiamond and Carbon-based Materials ResearchQuantum and electron transport phenomenaMolecular Junctions and Nanostructures
Vector Electrometry in a Wide-Gap-Semiconductor Device Using a Spin-Ensemble Quantum Sensor | Litcius