Spatial zigzag evolution of cracks in moving sapphire initiated by bursts of picosecond laser pulses for ultrafast wafer dicing
Mindaugas Gedvilas, Gediminas Račiukaitis
Abstract
, wafer thickness 430 μm, laser power 5.5 W, repetition rate 100 kHz, sub-pulse duration 9 ps, the temporal distance between sub-pulses in burst 26.7 ns, and the number of sub-pulses 13.
Topics & Concepts
Wafer dicingSapphireMaterials scienceWaferZigzagLaserOpticsPicosecondUltrashort pulseOptoelectronicsGeometryPhysicsMathematicsLaser Material Processing TechniquesIntegrated Circuits and Semiconductor Failure AnalysisAdvanced Surface Polishing Techniques