Low-Threshold Blue Quasi-2D Perovskite Laser through Domain Distribution Control
Chenhui Wang, Guang Dai, Junhui Wang, Minghuan Cui, Yingguo Yang, Sirui Yang, Chaochao Qin, Shuai Chang, Kaifeng Wu, Yufang Liu, Haizheng Zhong
Abstract
Quasi-2D perovskites, composed of self-organized quantum well structures, are emerging as gain materials for laser applications. Here we investigate the influence of domain distribution on the laser emission of CsPbCl 1.5 Br 1.5 -based quasi-2D perovskites. The use of 2,2-diphenylethylammonium bromide (DPEABr) as a ligand enables the formation of quasi-2D film with a large- n -dominated narrow domain distribution. Due to the reduced content of small- n domains, the incomplete energy transfer from small- n to large- n domains can be greatly addressed. Moreover, the photoinduced carriers can be concentrated on most of the large- n domains to reduce the local carrier density, thereby suppressing the Auger recombination. By controlling the domain distribution, we achieve blue amplified spontaneous emission and single-mode vertical-cavity surface-emitting lasing with low thresholds of 6.5 and 9.2 μJ cm –2, respectively. This work provides a guideline to design the domain distribution to realize low-threshold multicolor perovskite lasers.